Department of Common and Graduate Studies (CGS)
Dr. Shu-Han Hsu
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Phone Rangsit
+66-2-986-9009, +66-2-986-9101, +66-2-564-3226
Phone Bangkadi
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  • Ph.D. in Molecular Nanofabrication, MESA+ Institute Supramolecular Chemistry & Technology, University of Twente, Netherlands.
  • M.Sc. in Materials Physics and Nanotechnology, Linkoping University, Sweden.
  • B.Sc. in Materials Science and Engineering, National Tsing Hua University, Taiwan
  Research Areas

Surface chemistry, Nanofabrication, Sensing Device

  Work Experiences


  • 2019-Present: SIIT
  • 2016-2019 Engineering Manager for process developing in Seagate, Thailand
  • 2010-2015 Associate Researcher in Taiwan Semiconductor Research Institute, Taiwan 
  Professional Activities


  List of Publications


  1. S.H.Hsu, D.N. Reinhoudt, J. Huskens and A.H.Velders, “Imidazolide Monolayers for Reactive Microcontact Printing” J. Mater. Chem., 2008, 18, 4959–4963
  2. S.H.Hsu, M.D. Yilmaz, C. Blum, V. Subramaniam, D.N. Reinhoudt, A.H. Velders and J. Huskens,“Expression of Sensitized Eu3+ Luminescence at a Multivalent Interface” J. Am. Chem. Soc., 2009, 131, 12567-12569 (highlight in Chemistry World, RSC, 01-09-2009)
  3. D.Dorokhin, S.H.Hsu, N.Tomczak, D.N. Reinhoudt, J. Huskens , A.H.Velders, and G. Vancso “Visualizing Resonance Energy Transfer in Supramolecular Surface Patterns of β-CD-Functionalized Quantum Dot Hosts and Organic Dye Guests by Fluorescence Lifetime Imaging” small, 2010, Dec 20;6(24):2870-6
  4. A.G.Campo, S.H.Hsu, L. Puig, D.N Reinhoudt, J. Huskens and A.H. Velders, “Orthogonal Covalent and Noncovalent    Functionalization of Cyclodextrin-Alkyne Patterned Surfaces,J. Am. Chem. Soc., 2010, 132(33), 11434-11436
  5. M.D. Yilmaz, S.H.Hsu, D. N Reinhoudt, A.H. Velders, and J. Huskens, “Ratiometric Fluorescent Detection of an Anthrax     Biomarker at Molecular Printboards,Angew. Chem. Int. Ed., 2010, 49(34), 5938-5941
  6. D.Dorokhin, S.H.Hsu, N. Tomczak, D.N. Reinhoudt, J. Huskens, A.H. Velders, and G. J. Vancso “Fabrication and Luminescence of Designer Surface Patterns with β-Cyclodextrin Functionalized Quantum Dots via Multivalent Supramolecular Coupling” ACS Nano, 2010, 4, 137-142
  7. S.H.Hsu, D.N. Reinhoudt, J. Huskens and A.H.Velders, “ Lateral Interactions at Functional Monolayers” J. Mater. Chem., 2011, 21, 2428-2444 (invited review)
  8. N. Chantarat, S.H.Hsu, Chin-Ching Lin, Mei-Ching Chiang and San-Yuan Chen, “Mechanism of an AZO-coated FTO film in improving the hydrogen plasma durability of transparent conducting oxide thin films for amorphous-silicon based tandem solar cells”, J. Mater. Chem., 2012, 22, 8005
  9. N. Chantarat, Yu-Wei Chen, Shu-Han Hsu, Chin-Ching Lin, Mei-Ching Chiang,and San-Yuan Chena , “Effect of Oxygen on the Microstructural Growth and Physical Properties of Transparent Conducting Fluorine-Doped Tin Oxide Thin Films Fabricated by the Spray Pyrolysis Method ”, ECS Journal of Solid State Science and Technology, 2013, 2(9),Q131-Q135.
  10. Shu-Han Hsu, Chun-Lin Chu , Guang-Li Luo,“Selective dry-etching process for fabricating Ge gate-all-around field-effect transistors on Si substrates”, Thin Solid Films , 2013, 540, 183-189
  11. S.H.Hsu, M.D. Yilmaz, D.N. Reinhoudt, A.H.Velders, and J. Huskens, “Nonlinear Amplification of a Supramolecular Complex at a Multivalent Interface”, Angew. Chem. Int. Ed. 2013, 52,2.
  12. Hung-Chih Chang, S.-H Hsu, C.-L Chu, Y.-T Chen, W.-H Tu, P.-J Sung, G.-Li Luo, Y. –C. Yin Yin and C.W.Liu, Germanium gate-all-around pFETs on SOI, ECS Transactions 50(9):31-37,2013
  13. Wen-Hsien Tu, Shu-Han Hsu, and C.W. Liu, “The PN Junctions of Epitaxial Germanium on Silicon by Solid Phase Doping”, IEEE Transactions on Electron Devices (61, 7 ,2014 )
  14. Chia-Heng Chu, Ming-Kun Huang, Gen-Feng Wu, Chun-Lin Chu, Shu-Han Hsu*, Guang-Li  Luo, Fabrication of Si and Ge Vertical Nanowire for Transistor Applications, International Journal of Nanotechnology, 2014, 12, 1-2.
  15. C.W.Liu, Yen-Ting Chen and Shu-Han Hsu, (Invited) Gate-All-Around Ge FETs, ECS Transactions,64,6,2014

Conference Paper

  1. Shu-Han Hsu, Chun-Lin Chu, Wen-Hsien Tu, Yen-Chun Fu, Po-Jung Sung, Hung-Chih Chang, Yen-Ting Chen, Li-Yaw Cho, William Hsu, Guang-Li Luo, C. W. Liu, Chenming Hu, and Fu-Liang Yang, “Nearly Defect-free Ge Gate-All-Around FETs on Si Substrates”, IEDM, 2011, 35.2
  2. Shu-Han Hsu, Hung-Chih Chang, Chun-Lin Chu, Yen-Ting Chen, Wen-Hsien Tu, Fu Ju Hou, Chih Hung Lo, Po-Jung Sung, Bo-Yuan Chen, Guo-Wei Huang, Guang-Li Luo, C.W.Liu, Chenming Hu and Fu-Liang Yang, “Triangular-channel Ge NFETs on Si with (111) Sidewall-Enhanced Ion and Nearly Defect-free Channels”, IEDM, 2012, 23.6
  3. C. W. Liu, I. H. Wong, C. Yen-Ting, T. Wen-Hsien, H. Shih-Hsien, and H. Shu-Han, "Ge gate-all-around FETs on Si," in 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 2014, pp. 1-4,
  4. Y.-J. Lee1,T.-C. Cho, K.-H. Kao, P.-J. Sung, F.-K. Hsueh, P.-C. Huang, C.-T. Wu, S.-H. Hsu, W. -H. Huang, H.-C. Chen Y. Li, M. I. Current, B. Hengstebeck, J. Marino, T. Büyüklimanli, J.-M. Shieh, T.-S. Chao, W.-F. Wu, W.-K. Yeh, A novel junctionless FinFET structure with sub-5nm shell doping profile by molecular monolayer doping and microwave annealing, 2014 IEEE International Electron Devices Meeting(IEDM), 2014, 32.7.1
  5. C. W. Liu, I. Wong, S. Huang, C. Huang, and S. Hsu, "Advanced germanium channel transistors (invited)," in 2015 IEEE 11th International Conference on ASIC (ASICON),2015, pp. 1-4,
  6. Y. Lee , S. Hsu et al., "High performance poly Si junctionless transistors with sub-5nm conformally doped layers by molecular monolayer doping and microwave incorporating CO2 laser annealing for 3D stacked ICs applications," in 2015 IEEE International Electron Devices Meeting (IEDM),2015, 6.2.1-6.2.4,
  7. Chia-Chen Wan, Guang-Li Luo, Shu-Han Hsu, Kuo-Dong Hung, Chun-Lin Chu, Tuo-Hung Hou, Chun-Lin Chu, Tuo-Hung Hou, Chun-Jun Su, Szu-Hung Chen, Wen-Fa Wu, Wen-Kuan Yeh "Suspended Ge gate-all-around nanowire nFETs with junction isolation on bulk Si," in 2016 IEEE Silicon Nanoelectronics Workshop (SNW), 2016, pp. 130-131.
  8. C. C. Wan, S. Hsu, et al., "Suspended Ge Gate-All-Around Nanowire FETs with Selective Etching Technique," in 2016 International Conference on Solid State Devices and Materials (SSDM)



Title of Patent


Patent Number

  Bridge Structure


US 8975674 B2

  Bridge Structure and Method of fabrication the same



  Method of doping Semiconductor


TW I579903 B

  Isolation Structure and Method of Fabricating the Same


TW I557845

  Vertical Transistor Device and Fabricating Method Thereof

  (Technology Transfer, 2016)


TW I557915