School of Integrated Science and Innovation (ISI)
Dr. Shu-Han Hsu
Assistant Professor
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Phone Rangsit
+66-2-986-9009, +66-2-986-9101, +66-2-564-3226
Phone Bangkadi
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  • Ph.D. in Molecular Nanofabrication, MESA+ Institute Supramolecular Chemistry & Technology, University of Twente, Netherlands.
  • M.Sc. in Materials Physics and Nanotechnology, Linkoping University, Sweden.
  • B.Sc. in Materials Science and Engineering, National Tsing Hua University, Taiwan
  Research Areas

Surface chemistry, Nanofabrication, Sensing Device, 2D Materials, Optoelectronic Device

  Research Interests
  • 2D materials patterning and its device fabrication: The ability to pattern 2D materials is critical for fabricating advanced integrated devices. Different 2D materials are prepared with the intended functional group for anchoring or detection purposes. Soft lithography will be used to achieve quality patterning with proper substrate selection and modification.

Current funding:

  1. Development of Highly Sensitive Ti3C2Tx Mxene Gas Sensors (Matching Fund with National Taipei University of Technology, Taiwan)
  2. Establishment of Key Technology on Smart Gas Sensing and Related Device Application Platform, (NSTDA-NARLABs)


  • Designing and Fabrication of Optoelectronic Devices: develop optoelectronic and electroactive material (conducting polymer, perovskite quantum dots, etc.) that can integrate onto micro-device for portable device fabrication. Photoconductor will be assembled and completed with interdigitated electrode for performance optimization.   

Current funding:

  1. Development of Point-of-Care Microfluidics/Biochips Design and Realization for Diagnosis Of COVID-19 Using Magnetic Nanoparticle Enhancement (Narlabs, Taiwan)
  Work Experiences


  • 2019-Present: SIIT
  • 2016-2019 Engineering Manager for process developing in Seagate, Thailand
  • 2010-2015 Associate Researcher in Taiwan Semiconductor Research Institute, Taiwan 
  Professional Activities


  List of Publications


  1. S.H.Hsu, D.N. Reinhoudt, J. Huskens and A.H.Velders, “Imidazolide Monolayers for Reactive Microcontact Printing” J. Mater. Chem., 2008, 18, 4959–4963
  2. S.H.Hsu, M.D. Yilmaz, C. Blum, V. Subramaniam, D.N. Reinhoudt, A.H. Velders and J. Huskens,“Expression of Sensitized Eu3+ Luminescence at a Multivalent Interface” J. Am. Chem. Soc., 2009, 131, 12567-12569 (highlight in Chemistry World, RSC, 01-09-2009)
  3. D.Dorokhin, S.H.Hsu, N.Tomczak, D.N. Reinhoudt, J. Huskens , A.H.Velders, and G. Vancso “Visualizing Resonance Energy Transfer in Supramolecular Surface Patterns of β-CD-Functionalized Quantum Dot Hosts and Organic Dye Guests by Fluorescence Lifetime Imaging” small, 2010, Dec 20;6(24):2870-6
  4. A.G.Campo, S.H.Hsu, L. Puig, D.N Reinhoudt, J. Huskens and A.H. Velders, “Orthogonal Covalent and Noncovalent    Functionalization of Cyclodextrin-Alkyne Patterned Surfaces,J. Am. Chem. Soc., 2010, 132(33), 11434-11436
  5. M.D. Yilmaz, S.H.Hsu, D. N Reinhoudt, A.H. Velders, and J. Huskens, “Ratiometric Fluorescent Detection of an Anthrax     Biomarker at Molecular Printboards,Angew. Chem. Int. Ed., 2010, 49(34), 5938-5941
  6. D.Dorokhin, S.H.Hsu, N. Tomczak, D.N. Reinhoudt, J. Huskens, A.H. Velders, and G. J. Vancso “Fabrication and Luminescence of Designer Surface Patterns with β-Cyclodextrin Functionalized Quantum Dots via Multivalent Supramolecular Coupling” ACS Nano, 2010, 4, 137-142
  7. S.H.Hsu, D.N. Reinhoudt, J. Huskens and A.H.Velders, “ Lateral Interactions at Functional Monolayers” J. Mater. Chem., 2011, 21, 2428-2444 (invited review)
  8. N. Chantarat, S.H.Hsu, Chin-Ching Lin, Mei-Ching Chiang and San-Yuan Chen, “Mechanism of an AZO-coated FTO film in improving the hydrogen plasma durability of transparent conducting oxide thin films for amorphous-silicon based tandem solar cells”, J. Mater. Chem., 2012, 22, 8005
  9. N. Chantarat, Yu-Wei Chen, Shu-Han Hsu, Chin-Ching Lin, Mei-Ching Chiang,and San-Yuan Chena , “Effect of Oxygen on the Microstructural Growth and Physical Properties of Transparent Conducting Fluorine-Doped Tin Oxide Thin Films Fabricated by the Spray Pyrolysis Method ”, ECS Journal of Solid State Science and Technology, 2013, 2(9),Q131-Q135.
  10. Shu-Han Hsu, Chun-Lin Chu , Guang-Li Luo,“Selective dry-etching process for fabricating Ge gate-all-around field-effect transistors on Si substrates”, Thin Solid Films , 2013, 540, 183-189
  11. S.H.Hsu, M.D. Yilmaz, D.N. Reinhoudt, A.H.Velders, and J. Huskens, “Nonlinear Amplification of a Supramolecular Complex at a Multivalent Interface”, Angew. Chem. Int. Ed. 2013, 52,2.
  12. Hung-Chih Chang, S.-H Hsu, C.-L Chu, Y.-T Chen, W.-H Tu, P.-J Sung, G.-Li Luo, Y. –C. Yin Yin and C.W.Liu, Germanium gate-all-around pFETs on SOI, ECS Transactions 50(9):31-37,2013
  13. Wen-Hsien Tu, Shu-Han Hsu, and C.W. Liu, “The PN Junctions of Epitaxial Germanium on Silicon by Solid Phase Doping”, IEEE Transactions on Electron Devices (61, 7 ,2014 )
  14. Chia-Heng Chu, Ming-Kun Huang, Gen-Feng Wu, Chun-Lin Chu, Shu-Han Hsu*, Guang-Li  Luo, Fabrication of Si and Ge Vertical Nanowire for Transistor Applications, International Journal of Nanotechnology, 2014, 12, 1-2.
  15. C.W.Liu, Yen-Ting Chen and Shu-Han Hsu, (Invited) Gate-All-Around Ge FETs, ECS Transactions,64,6,2014
  16. Shu-Han Hsu,* Chia-Chen Wan, Ta-Chun Cho, and Yao-Jen Lee, Investigation of Boron Distribution at the SiO2/Si Interface of Monolayer Doping, ACS Omega, 2021
  17. Chin-Wei Liu, Shyong Lee, Dean Chou, Shu-Han Hsu, and Chun-Lin Chu, Dimensional accuracy in quick plastic forming of aluminum alloy using demolding mechanism, Advances in Mechanical Engineering, 2021, Vol. 13(5), 1-11
  18. Linh Chi T. Cao, Chao-An Jong*, Shu-Han Hsu*, Shih-Feng Tseng*, A simple approach to MXene micropatterning from molecular driven assembly, ACS Omega, 2021 (Dec)
  19. Dean Chou*, Chun-Lin Chu, Jen-Yi Chang, Shu-Han Hsu, Ge/Si multilayer epitaxy and removal of dislocations from Ge-nanosheet-channel MOSFETs, Scientific Reports, accepted, 2021 (Dec)

Conference Paper

  1. Shu-Han Hsu, Chun-Lin Chu, Wen-Hsien Tu, Yen-Chun Fu, Po-Jung Sung, Hung-Chih Chang, Yen-Ting Chen, Li-Yaw Cho, William Hsu, Guang-Li Luo, C. W. Liu, Chenming Hu, and Fu-Liang Yang, “Nearly Defect-free Ge Gate-All-Around FETs on Si Substrates”, IEDM, 2011, 35.2
  2. Shu-Han Hsu, Hung-Chih Chang, Chun-Lin Chu, Yen-Ting Chen, Wen-Hsien Tu, Fu Ju Hou, Chih Hung Lo, Po-Jung Sung, Bo-Yuan Chen, Guo-Wei Huang, Guang-Li Luo, C.W.Liu, Chenming Hu and Fu-Liang Yang, “Triangular-channel Ge NFETs on Si with (111) Sidewall-Enhanced Ion and Nearly Defect-free Channels”, IEDM, 2012, 23.6
  3. C. W. Liu, I. H. Wong, C. Yen-Ting, T. Wen-Hsien, H. Shih-Hsien, and H. Shu-Han, "Ge gate-all-around FETs on Si," in 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 2014, pp. 1-4,
  4. Y.-J. Lee1,T.-C. Cho, K.-H. Kao, P.-J. Sung, F.-K. Hsueh, P.-C. Huang, C.-T. Wu, S.-H. Hsu, W. -H. Huang, H.-C. Chen Y. Li, M. I. Current, B. Hengstebeck, J. Marino, T. Büyüklimanli, J.-M. Shieh, T.-S. Chao, W.-F. Wu, W.-K. Yeh, A novel junctionless FinFET structure with sub-5nm shell doping profile by molecular monolayer doping and microwave annealing, 2014 IEEE International Electron Devices Meeting(IEDM), 2014, 32.7.1
  5. C. W. Liu, I. Wong, S. Huang, C. Huang, and S. Hsu, "Advanced germanium channel transistors (invited)," in 2015 IEEE 11th International Conference on ASIC (ASICON),2015, pp. 1-4,
  6. Y. Lee , S. Hsu et al., "High performance poly Si junctionless transistors with sub-5nm conformally doped layers by molecular monolayer doping and microwave incorporating CO2 laser annealing for 3D stacked ICs applications," in 2015 IEEE International Electron Devices Meeting (IEDM),2015, 6.2.1-6.2.4,
  7. Chia-Chen Wan, Guang-Li Luo, Shu-Han Hsu, Kuo-Dong Hung, Chun-Lin Chu, Tuo-Hung Hou, Chun-Lin Chu, Tuo-Hung Hou, Chun-Jun Su, Szu-Hung Chen, Wen-Fa Wu, Wen-Kuan Yeh "Suspended Ge gate-all-around nanowire nFETs with junction isolation on bulk Si," in 2016 IEEE Silicon Nanoelectronics Workshop (SNW), 2016, pp. 130-131.
  8. C. C. Wan, S. Hsu, et al., "Suspended Ge Gate-All-Around Nanowire FETs with Selective Etching Technique," in 2016 International Conference on Solid State Devices and Materials (SSDM)



  1. Bridge Structure, US, US 8975674 B2
  2. Bridge Structure and Method of fabrication the same, Taiwan, TW451494
  3. Method of doping Semiconductor, Taiwan, TW I579903 B
  4. Isolation Structure and Method of Fabricating the Same, Taiwan, TW I557845
  5. Vertical Transistor Device and Fabricating Method Thereof ,Taiwan, TW I557915 (Technology Transfer, 2016)